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0.13-/spl mu/m RF CMOS and varactors performance optimization by multiple gate layouts
0.13-/spl mu/m radio frequency (RF) CMOS devices with multifinger gate structure have been fabricated by the standard logic process, and the measured effective gate-length is 80 nm. Extensive RFExpand
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Soft-switching series-resonant converter to generate high output voltage for processing microbes
This paper presents analysis, design and practical consideration of a soft-switching series-resonant converter to generate high output voltage for processing microbes, which includes foodExpand
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A Compact RF CMOS Modeling for Accurate High-Frequency Noise Simulation in Sub-100-nm MOSFETs
  • J. Guo, Y.-M. Lin
  • Materials Science, Computer Science
  • IEEE Transactions on Computer-Aided Design of…
  • 1 September 2008
TLDR
A compact RF CMOS model incorporating an improved thermal noise model is developed. Expand
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Analysis and design of multiswitch driver for high pulsed voltage generators
This paper presents a multiswitch driver for high pulsed voltage generators (PVGs). A high PVG usually needs many switches formed with multiple MOSFETs connected in series to yield high output pulsedExpand
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Absolute frequency measurement of iodine-stabilized 543 nm He-Ne laser
We present our work on the frequency measurement of iodine-stabilized 543 nm He-Ne laser. We have finished the following experiment: compact iodine-stabilized 543 nm He-Ne laser and cavity enhancedExpand
Storage-ring Electron Cooler for Relativistic Ion Beams
Application of electron cooling at ion energies above a few GeV has been limited due to reduction of electron cooling efficiency with energy and difficulty in producing and accelerating aExpand
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