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Ballistic carbon nanotube field-effect transistors
It is shown that contacting semiconducting single-walled nanotubes by palladium, a noble metal with high work function and good wetting interactions with nanotube, greatly reduces or eliminates the barriers for transport through the valence band of nanot tubes. Expand
Theory of ballistic nanotransistors
Numerical simulations are used to guide the development of a simple analytical theory for ballistic field-effect transistors. When two-dimensional (2-D) electrostatic effects are small (and when the… Expand
Room-temperature all-semiconducting sub-10-nm graphene nanoribbon field-effect transistors.
- Xinran Wang, Y. Ouyang, Xiaolin Li, Hailiang Wang, J. Guo, H. Dai
- Physics, Medicine
- Physical review letters
- 24 March 2008
The sub-10 nm GNRFETs are comparable to small diameter carbon nanotube FETs with Pd contacts in on-state current density and Ion/Ioff ratio, but have the advantage of producing all-semiconducting devices. Expand
Self-Aligned Ballistic Molecular Transistors and Electrically Parallel Nanotube Arrays
Carbon nanotube field-effect transistors with structures and properties near the scaling limit with short (down to 50 nm) channels, self-aligned geometries, palladium electrodes with low contact… Expand
N-Doping of Graphene Through Electrothermal Reactions with Ammonia
An n-type graphene field-effect transistor that operates at room temperature is fabricated and confirmed the carbon-nitrogen species in graphene thermally annealed in ammonia is covalently functionalized by nitrogen species. Expand
Role of the dissolved zinc ion and reactive oxygen species in cytotoxicity of ZnO nanoparticles.
- Wenhua Song, Jinyang Zhang, +4 authors Zengtian Sun
- Chemistry, Medicine
- Toxicology letters
- 15 December 2010
With large-scale production and wide application of nanoscale ZnO, its health hazard has attracted extensive worldwide attention. In this study, cytotoxicity of different sized and shaped ZnO… Expand
High performance n-type carbon nanotube field-effect transistors with chemically doped contacts.
- A. Javey, R. Tu, D. Farmer, J. Guo, R. Gordon, H. Dai
- Materials Science, Physics
- Nano letters
- 14 December 2004
Short channel ( approximately 80 nm) n-type single-walled carbon nanotube (SWNT) field-effect transistors (FETs) with potassium (K) doped source and drain regions and high-kappa gate dielectrics (ALD HfO(2)) are obtained and demonstrate the potential of SWNTs for future complementary electronics. Expand
High-field quasiballistic transport in short carbon nanotubes.
- A. Javey, J. Guo, +4 authors H. Dai
- Materials Science, Medicine
- Physical review letters
- 10 September 2003
Transport through very short nanotube nanotubes is free of significant acoustic and optical phonon scattering and thus ballistic and quasiballistic at the low- and high-bias voltage limits, respectively. Expand
Pathways and correlates connecting Latinos' mental health with exposure to the United States.
Discrimination and family cultural conflict appear to play a significant role in the association between time in the United States and the likelihood of developing psychiatric disorders among Latino immigrants. Expand
Performance projections for ballistic carbon nanotube field-effect transistors
The performance limits of carbon nanotube field-effect transistors (CNTFETs) are examined theoretically by extending a one-dimensional treatment used for silicon metal–oxide–semiconductor… Expand