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Ballistic carbon nanotube field-effect transistors
A common feature of the single-walled carbon-nanotube field-effect transistors fabricated to date has been the presence of a Schottky barrier at the nanotube–metal junctions. These energy barriers… Expand
Theory of ballistic nanotransistors
Numerical simulations are used to guide the development of a simple analytical theory for ballistic field-effect transistors. When two-dimensional (2-D) electrostatic effects are small (and when the… Expand
Room-temperature all-semiconducting sub-10-nm graphene nanoribbon field-effect transistors.
- X. Wang, Y. Ouyang, X. Li, H. Wang, J. Guo, H. Dai
- Physics, Medicine
- Physical review letters
- 24 March 2008
Sub-10 nm wide graphene nanoribbon field-effect transistors (GNRFETs) are studied systematically. All sub-10 nm GNRs afforded semiconducting FETs without exception, with Ion/Ioff ratio up to 10(6)… Expand
Self-Aligned Ballistic Molecular Transistors and Electrically Parallel Nanotube Arrays
Carbon nanotube field-effect transistors with structures and properties near the scaling limit with short (down to 50 nm) channels, self-aligned geometries, palladium electrodes with low contact… Expand
N-Doping of Graphene Through Electrothermal Reactions with Ammonia
Negatively Doped Graphene Nanoribbons The potential applications in electronic devices of graphene (single atom, thick layers of graphite) would be even greater if it can be accessed in both p- and… Expand
Role of the dissolved zinc ion and reactive oxygen species in cytotoxicity of ZnO nanoparticles.
With large-scale production and wide application of nanoscale ZnO, its health hazard has attracted extensive worldwide attention. In this study, cytotoxicity of different sized and shaped ZnO… Expand
High-field quasiballistic transport in short carbon nanotubes.
Single walled carbon nanotubes with Pd Ohmic contacts and lengths ranging from several microns down to 10 nm are investigated by electron transport experiments and theory. The mean-free path (MFP)… Expand
High performance n-type carbon nanotube field-effect transistors with chemically doped contacts.
- A. Javey, R. Tu, D. Farmer, J. Guo, R. Gordon, H. Dai
- Medicine, Materials Science
- Nano letters
- 14 December 2004
Short channel ( approximately 80 nm) n-type single-walled carbon nanotube (SWNT) field-effect transistors (FETs) with potassium (K) doped source and drain regions and high-kappa gate dielectrics (ALD… Expand
Performance projections for ballistic carbon nanotube field-effect transistors
The performance limits of carbon nanotube field-effect transistors (CNTFETs) are examined theoretically by extending a one-dimensional treatment used for silicon metal–oxide–semiconductor… Expand
Pathways and correlates connecting Latinos' mental health with exposure to the United States.
OBJECTIVES We examined potential pathways by which time in the United States may relate to differences in the predicted probability of past-year psychiatric disorder among Latino immigrants as… Expand