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Optically programmable electron spin memory using semiconductor quantum dots
This work demonstrates a single electron spin memory device in which the electron spin can be programmed by frequency selective optical excitation, and directly measure the intrinsic spin flip time and its dependence on magnetic field.
Inverted electron-hole alignment in InAs-GaAs self-assembled quantum dots.
It is demonstrated that the excited state transitions arise from lateral quantization and that tuning through the inhomogeneous distribution of dot energies can be achieved by variation of electric field.
Virtual Proofs of Reality and their Physical Implementation
- U. Rührmair, J. L. Martinez-Hurtado, W. Burleson
- Computer Science, MathematicsIEEE Symposium on Security and Privacy
- 17 May 2015
This work touches upon, and partly extends, several established concepts in cryptography and security, including physical unclonable functions, quantum cryptography, interactive proof systems, and, most recently, physical zero-knowledge proofs.
Growth kinetics in position-controlled and catalyst-free InAs nanowire arrays on Si(111) grown by selective area molecular beam epitaxy
- S. Hertenberger, D. Rudolph, M. Bichler, J. Finley, G. Abstreiter, G. Koblmüller
- Materials Science
- 14 December 2010
We investigated the interwire distance dependence on the growth kinetics of vertical, high-yield InAs nanowire arrays on Si(111) grown by catalyst-free selective area molecular beam epitaxy (MBE).…
Spontaneous alloy composition ordering in GaAs-AlGaAs core-shell nanowires.
High-resolution metrology techniques and associated chemical analysis reveal rich structure in the AlGaAs alloy composition due to interface segregation, nanofaceting, and local alloy fluctuations within GaAs-Al0.3Ga0.7As core-shell nanowires grown by molecular beam epitaxy on silicon.
Phonon-assisted transitions from quantum dot excitons to cavity photons
For a single semiconductor quantum dot embedded in a microcavity, we theoretically and experimentally investigate phonon-assisted transitions between excitons and the cavity mode. Within the…
Lasing from individual GaAs-AlGaAs core-shell nanowires up to room temperature.
By carefully designing the materials composition profile, high-performance infrared NW lasers can be realised using III/V semiconductors using core-shell GaAs-AlGaAs nanowires.
Three-stage decoherence dynamics of an electron spin qubit in an optically active quantum dot
The mechanisms of decoherence in solid-state spin qubits subject to low magnetic fields turn out to be more complex than previously expected as an additional fast relaxation stage has now been…
Monolithically Integrated High-β Nanowire Lasers on Silicon.
It is demonstrated how, by inserting a tailored dielectric interlayer at the NW-Si interface, low-threshold single mode lasing can be achieved in vertical-cavity GaAs-AlGaAs core-shell NW lasers on silicon as measured at low temperature.
Emitters of N-photon bundles
A cavity QED scheme to realize emitters that release their energy in groups, or “bundles” of N photons, for integer N, useful for quantum information processing and for medical applications is proposed.