The thermal and gate-voltage dependencies for the capture and emission times of random telegraph signals have been theoretically analyzed in a Si-SiO 2 nterface. A quasi-two-dimensional treatment of… (More)

We have studied the electron-transport properties of strained-Si on relaxed Si 12xGex channel MOSFETs using a Monte Carlo simulator adapted to account for this new heterostructure. The… (More)

We present a study of the main features of a two-dimensional hole gas confined near a Si–SiO 2 heterointerface. Starting from the framework of the effective mass theory, we were able to separate the… (More)

An improved theory for remote-charge-scattering-limited mobility in silicon inversion layers is developed. The model takes into account the effects of image charges, screening, inversion layer… (More)

A simple analytical expression to account for electron-velocity overshoot effects on the performance of very short-channel MOSFET’s has been obtained. This new model can be easily included in circuit… (More)

The effect of surface roughness scattering on electron transport properties in extremely thin silicon-on-insulator inversion layers is carefully analyzed. It is shown that if the silicon layer is… (More)

Inversion-layer mobility has been investigated in extremely thin silicon-on-insulator metal–oxide– semiconductor field-effect transistors with a silicon film thickness as low as 5 nm. The Poisson and… (More)

This work proposes an analytical modelling of non-parabolicity for the valence bands of Si and Ge. With this aim, we obtained piecewise functions that enabled analytical evaluation of the energy… (More)

We have developed a new analytical ultra-short channel MOSFET model for circuit simulation including velocity overshoot effects. We have been able to reproduce experimental I-V curves and… (More)

We have studied in depth the performance of superficial strained Si/Si1−x Gex channel MOSFETs. To do so, we developed a two-dimensional drift-diffusion simulator including inversion layer… (More)