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From porous to dense thin ZnO films through reactive DC sputter deposition onto Si (100) substrates
Thin polycrystalline ZnO films are deposited onto Si (100) substrates by means of DC reactive sputter deposition from a Zn target in an argon–oxygen mixture. The influences of the oxygen content inExpand
  • 27
Origin of Lower Film Density and Larger Defect Density in Amorphous In–Ga–Zn–O Deposited at High Total Pressure
TLDR
We found that increasing the total pressure deteriorated TFT characteristics; i.e., saturation mobility was dropped from 10 to 4 cm2/(V·s), subthreshold swing was increased from 0.2 to 0.5 V/dec, and threshold voltage was positive-shifted from 2 to 15 V. It is related to increased oxygen concentration and decreased weight density of the a-IGZO films. Expand
  • 22
Fabrication and properties of nanocrystalline Zn‐Ir‐O thin films
New p-type semiconducting ZnIrSiO thin films were fabricated using reactive magnetron RF sputtering from ZnIrSi target. Their transport properties were: resistivity ρ=0.6 Ωcm, hole concentrationExpand
  • 5
Transparent Amorphous Ru–Si–O Schottky Contacts to In–Ga–Zn–O
TLDR
We propose fabrication of Schottky barrier to a-IGZO based on transparent conductive oxide (TCO), namely Ru-Si-O, which allows to avoid pre-treatment of the semiconductor surface. Expand
  • 5
Strain distribution in MgxZn1-xO layers with various content of Mg grown on a-plane sapphire by plasma-assisted molecular beam epitaxy
Abstract Dependence of strain distribution on Mg concentration in MgxZn1-xO layers on a-plane sapphire substrate grown by plasma-assisted molecular beam epitaxy was examined. Accurate determinationExpand
  • 7
In-Ga-Zn-O amorphous thin films for transparent electronics
In-Ga-Zn-O thin films fabricated by reactive RF magnetron sputtering have been investigated for their compositional, structural, morphological, electrical and optical properties. All resulting filmsExpand
  • 4
Incorporation of oxygen in SiC implanted with hydrogen
Abstract Oxygen accumulation at buried implantation-damage layers was studied after post-implantation annealing of hydrogen- or deuterium-implanted 4H–SiC. In this study H + or 2 H + implantation wasExpand
  • 4
Diffusion and impurity segregation in hydrogen-implanted silicon carbide
Diffusion and segregation behavior of hydrogen and oxygen in silicon carbide subjected to H implantation and subsequent annealing were studied with a number of analytical techniques includingExpand
  • 13
Performance of a nitrogen implanted large aperture THz emitter
Improved bandwidth of a large aperture nitrogen implanted GaAs photoconductive THz emitter is presented in this paper. An effect of nitrogen ion implantation on semi-insulating GaAs has been studiedExpand
Response of ZnO/GaN Heterostructure to Ion Irradiation
In this paper we report on the analysis of Al-implanted ZnO/GaN bilayers in search for the damage production mechanism and possible ion mixing. 100 nm or 200 nm thick ZnO epitaxial layers were grownExpand
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