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A magnetic topological semimetal Sr1-yMn1-zSb2 (y, z < 0.1).
A new type of magnetic semimetal Sr1-yMn1-zSb2 with nearly massless relativistic fermion behaviour with a canted antiferromagnetic order with a ferromagnetic component for T  <  304 K is reported. Expand
Magnetoresistance from quantum interference effects in ferromagnets
It is argued that magnetoresistance can arise by a different mechanism in certain ferromagnets—quantum interference effects rather than simple scattering—and only weakly temperature-dependent below the Curie point. Expand
Magnetic chiral ionic liquids derived from amino acids.
Novel room temperature magnetic chiral ionic liquids derived from amino acids were synthesized and their magnetic properties as well as chiral discrimination abilities were investigated.
Large anomalous Hall effect in a silicon-based magnetic semiconductor
It is shown here that it is productive to consider transition metal monosilicides as potential alternatives for spintronics, and the discovery that the bulk metallic magnets derived from doping the narrow-gap insulator FeSi with Co share the very high anomalous Hall conductance of (GaMn)As, while displaying Curie temperatures as high as 53 K. Expand
Discovery of the Griffiths phase in the itinerant magnetic semiconductor Fe1-xCoxS2.
It is shown that this magnetic semiconductor undergoes a percolative magnetic transition with distinct similarities to the Griffiths phase, including singular behavior at xc and zero temperature. Expand
Probing the quantum critical behavior of CeCoIn5 via Hall effect measurements.
It is shown that the resulting crossover line in the field-temperature phase diagram favors a field induced quantum critical point at mu(0)H(qc) approximately 4.1 T below H(c2)(T=0) suggesting related, yet separate, critical fields. Expand
Exploring the origins of the Dzyaloshinskii-Moriya interaction in MnSi
By using magnetization and small-angle neutron scattering measurements, we have investigated the magnetic behavior of theExpand
Suppressed reflectivity due to spin-controlled localization in a magnetic semiconductor
The narrow gap semiconductor FeSi owes its strong paramagnetism to electron-correlation effects. Partial Co substitution for Fe produces a spin-polarized doped semiconductor. The spin polarizationExpand
Electrical anisotropy and coexistence of structural transitions and superconductivity in IrT e 2
We report experimental investigations of the electrical transport, magnetic, and thermodynamic properties of $\mathrm{IrT}{\mathrm{e}}_{2}$ single crystals. The resistivity, magnetization, andExpand
Spin density wave instability in a ferromagnet
Through a combination of neutron diffraction experiments and simulations, it is discovered that the AFM state is an incommensurate spin-density wave (ISDW) ordering generated by nesting in the spin polarized Fermi surface. Expand