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Hydrogen in crystalline semiconductors
A review of the properties of hydrogen in crystalline semiconductors is presented. The equilibrium lattice positions of the various states of hydrogen are detailed, together with the reactions ofExpand
Hydrogen interactions with defects in crystalline solids
Hydrogen interactions with imperfections in crystalline metals and semiconductors are reviewed. Emphasis is given to mechanistic experiments and theoretical advances contributing to predictiveExpand
Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Si-E Center
The Si-$E$ center is one of the dominant defects produced by electron irradiation in phosphorus-doped vacuum floating zone silicon. It introduces an acceptor level atExpand
Electron Radiation Damage in Semiconductors and Metals.
DEFECTS IN IRRADIATED SILICON. II. INFRARED ABSORPTION OF THE Si-A CENTER
S>The silicon--A center is a major radiation-damage defect produced in "pulled" silicon by room-temperature irradiation. The infrared measurements are presented which, in conjunction with spinExpand
Defect energy levels in boron-doped silicon irradiated with 1-MeV electrons
Using transient capacitance spectroscopy, we studied defect energy levels and their annealing behavior in boron-doped silicon of various resistivities irradiated with 1-MeV electrons at roomExpand
EPR studies of defects in electron-irradiated silicon: A triplet state of vacancy-oxygen complexes
Three new EPR spectra (Si-A14, -A15, and -A16) and two previously known spectra (Si-P2 and -P4) are observed for the first time in electron-irradiated silicon. The microscopic defect models areExpand
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