• Publications
  • Influence
An analytical approach to the capacitance-voltage characteristics of double-heterojunction HEMTs
The two-dimensional electron gas concentration and capacitance in AlGaAs/GaAs/AlGaAs double-heterojunction high-electron-mobility transistors (DH-HEMTs) are calculated as a function of gate voltageExpand
Studies of the DC, low-frequency, and microwave characteristics of uniform and step-doped GaAs/AlGaAs HEMTs
A theoretical and experimental study of step-doped HEMTs (high electron mobility transition) with lightly and heavily doped regions is presented. Threshold voltage control and sensitivity withExpand
Reliability modeling of capacitive RF MEMS
The kinetic of dielectric charging in capacitive RF microelectromechanical systems (RF MEMS) is investigated using an original method of stress and monitoring. This effect is investigated through aExpand
Investigation of Stiction Effect in Electrostatic Actuated RF MEMS Devices
The main failure mode of electrostatic actuated RF MEMS, the stiction of the bridge due to dielectric charging, is investigated using an appropriate methodology based on the MEMS microwaveExpand
Carbon Nanotube Based Dielectric for Enhanced RF MEMS Reliability
This paper presents the fabrication and experimental results of capacitive MEM switches with a carbon nanotubes (CNT) based dielectric for the first time to our knowledge. Double wall nanotubesExpand
AlGaN/GaN mixer MMICs, and RF front-end receivers for C-, Ku-, and Ka-band space applications
AlGaN/GaN HEMTs have been widely used in RF power circuits such as high power amplifiers [1]. This is mainly due to the capability to handle large power. Besides this main advantage, this technologyExpand
The influence of ion-implanted profiles on the performance of GaAs MESFET's and MMIC amplifiers
The RF small-signal performance of GaAs MESFETs and MMIC amplifiers as a function of various ion-implanted profiles is theoretically and experimentally investigated. Implantation energy, dose, andExpand
Evolution and recent development in MMIC's for space application
A very aggressive policy has been set up in the early 1990s to introduce MMIC in space equipment in ALCATEL Space Industries. The first step was to choose preferred suppliers able to produce highExpand
MEMS DC contact micro relays on ceramic substrate for space communication switching network
This paper presented several examples of MEMS ohmic micro relay integration applied to the design of wide band and very low loss basic switching functions. These functions form basic blocks which canExpand
Ka Band power limiter for satellite channel amplifier
Some Ka-Band payloads request an anti-jamming capacity to be protected against RF interference attacks. This performance can be provided by Thales Alenia Space Ka-Band channel amplifiers thanks toExpand