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Fully integrated 60 GHz transceiver in SiGe BiCMOS, RF modules, and 3.6 Gbit/s OFDM data transmission
A fully integrated transmitter (TX) and receiver (RX) front-end chipset, produced in 0.25 µm SiGe:C bipolar and complementary metal oxide semiconductor (BiCMOS) technology, is presented. TheExpand
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Takt- und Datenrückgewinnungsschaltungen mit automatischer Wahl der Bitrate für bitratenflexible optische Übertragungssysteme
Die Dissertation befasst sich mit dem Entwurf und der Realisierung von bit- ratenflexiblen Takt- und Datenruckgewinnungsschaltungen mit automatischer Wahl der Bitrate furExpand
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A fully integrated 60 GHz transmitter front-end in SiGe BiCMOS technology
A fully integrated transmitter (TX) front-end for wireless communication at 60 GHz, produced in 0.25 µm SiGe:C BiCMOS technology is presented. The transmitter features a modified heterodyne topologyExpand
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Integrated 22 GHz low-phase-noise VCO with digital tuning in SiGe BiCMOS technology
A fully integrated voltage-controlled oscillator (VCO) with a 17% tuning range and a low phase noise fabricated in a 0.25 mum SiGe BiCMOS technology is presented. To achieve a wide tuning range whileExpand
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A fully integrated 120-GHz six-port receiver front-end in a 130-nm SiGe BiCMOS technology
A fully integrated six-port receiver front-end at 120 GHz center frequency including a low-noise-amplifier, a passive six-port network, a VCO, and four direct converters is presented in thisExpand
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An integrated 10 GHz low-noise phase-locked loop with improved PVT tolerance
An integrated phase-locked loop (PLL) with low phase noise is presented, which is robust with respect to variations of device parameters with process, supply voltage, and temperature (PVT). Expand
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An on-board differential patch array antenna and interconnects design for 60 GHz applications
An on-board differential patch array antenna for 60 GHz applications was designed, fabricated and measured. The antenna was optimized including bond-wires which are used for packaging. A gain ofExpand
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Analysis and minimization of substrate spurs in fractional-N frequency synthesizers
This paper analyses substrate-related spurious tones in fractional-N phase-locked loops with integrated VCOs. Expand
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Vertical Transistor with a Graphene Base
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An X-Band low-power and low-phase-noise VCO using bondwire inductor
In this paper a low-power low-phase-noise voltage-controlled-oscillator (VCO) has been designed and, fabricated in 0.25 µm SiGe BiCMOS process. The resonator of the VCO is implemented with on-chipExpand
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