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Optical properties and damage analysis of GaAs single crystals partly amorphized by ion implantation
Dielectric functions of partly amorphized GaAs layers produced by deep ion implantation of different doses of 270‐keV As+ ions in crystalline (c‐) GaAs have been measured from 1.5 to 6.0 eV byExpand
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Spectroscopic Analysis of the Interface Between Si and Its Thermally Grown Oxide
Spectroscopic ellipsometric data from 1.5–5.8 eV has been analyzed to determine the in situ optical response of the interface between Si and its thermally grown oxide. Results for , , and sampleExpand
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A NEW RESONANT ELLIPSOMETRIC TECHNIQUE FOR CHARACTERIZING THE INTERFACE BETWEEN GaAs AND ITS PLASMA-GROWN OXIDE.
At certain wavelengths, depending on the thickness of a thin transparent dielectric layer on an absorbing substrate, a standing‐wave condition can be produced that efficiently couples the S wave toExpand
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Spatially resolved ellipsometry
Using a convergent beam approach, a spatially resolved ellipsometry (SRE) has been achieved. The modifications and the limitations due to the use of such a nonplanar wave for an ellipsometricExpand
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The LNeuro-Chip: A Digital VLSI with on-Chip Learning Mechanism
TLDR
Neural network simulations are often limited because of the time required for both the learning and the evaluation phase of the simulation. Expand
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Dielectric function of Si‐SiO2 and Si‐Si3N4 mixtures
Expressions for the dielectric function of Si‐SiO2 and Si‐Si3N4 composites are obtained by combining the Si‐centered tetrahedral model of Philipp with composite‐media theory. The similarity betweenExpand
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ELLIPSOMETRY IN THIN FILM ANALYSIS
This is not meant to be another review of ellipsometry, since a number of detailed works (1-5) have been published in recent years, including a very complete book by Azzam & Bashara (I). Rather weExpand
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Thermal nitridation of silicon dioxide films
Thermal SiO2 films, ranging in thickness from 200 to 1200 A, were thermally nitrided using NH3 at temperatures between 800 and 1160 °C and for times varying between 3 min and 5 h. The resulting filmsExpand
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