Author pages are created from data sourced from our academic publisher partnerships and public sources.
- Publications
- Influence
Investigation of effective-medium models of microscopic surface roughness by spectroscopic ellipsometry
- D. E. Aspnes, J. B. Theeten, F. Hottier
- Materials Science
- 15 October 1979
Optical Properties of the Interface between Si and Its Thermally Grown Oxide
- D. E. Aspnes, J. B. Theeten
- Physics
- 1 October 1979
Optical properties and damage analysis of GaAs single crystals partly amorphized by ion implantation
- M. Erman, J. B. Theeten, P. Chambon, S. Kelso, D. E. Aspnes
- Physics
- 15 November 1984
Dielectric functions of partly amorphized GaAs layers produced by deep ion implantation of different doses of 270‐keV As+ ions in crystalline (c‐) GaAs have been measured from 1.5 to 6.0 eV by… Expand
Spectroscopic Analysis of the Interface Between Si and Its Thermally Grown Oxide
- D. E. Aspnes, J. B. Theeten
- Materials Science
- 1 June 1980
Spectroscopic ellipsometric data from 1.5–5.8 eV has been analyzed to determine the in situ optical response of the interface between Si and its thermally grown oxide. Results for , , and sample… Expand
A NEW RESONANT ELLIPSOMETRIC TECHNIQUE FOR CHARACTERIZING THE INTERFACE BETWEEN GaAs AND ITS PLASMA-GROWN OXIDE.
- J. B. Theeten, D. E. Aspnes, R. H. Chang
- Materials Science
- 1 December 1978
At certain wavelengths, depending on the thickness of a thin transparent dielectric layer on an absorbing substrate, a standing‐wave condition can be produced that efficiently couples the S wave to… Expand
Spatially resolved ellipsometry
- M. Erman, J. B. Theeten
- Physics
- 1 August 1986
Using a convergent beam approach, a spatially resolved ellipsometry (SRE) has been achieved. The modifications and the limitations due to the use of such a nonplanar wave for an ellipsometric… Expand
The LNeuro-Chip: A Digital VLSI with on-Chip Learning Mechanism
- J. B. Theeten, M. Duranton, N. Mauduit, J. Sirat
- Computer Science
- 1990
TLDR
Dielectric function of Si‐SiO2 and Si‐Si3N4 mixtures
- D. E. Aspnes, J. B. Theeten
- Physics
- 1 July 1979
Expressions for the dielectric function of Si‐SiO2 and Si‐Si3N4 composites are obtained by combining the Si‐centered tetrahedral model of Philipp with composite‐media theory. The similarity between… Expand
ELLIPSOMETRY IN THIN FILM ANALYSIS
- J. B. Theeten, D. E. Aspnes
- Chemistry
- 1 August 1981
This is not meant to be another review of ellipsometry, since a number of detailed works (1-5) have been published in recent years, including a very complete book by Azzam & Bashara (I). Rather we… Expand
Thermal nitridation of silicon dioxide films
- F. H. Habraken, A. E. T. Kuiper, Y. Tamminga, J. B. Theeten
- Chemistry
- 1 October 1982
Thermal SiO2 films, ranging in thickness from 200 to 1200 A, were thermally nitrided using NH3 at temperatures between 800 and 1160 °C and for times varying between 3 min and 5 h. The resulting films… Expand