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Planar strain in CaF2 films, grown by molecular beam epitaxy at 700 °C on (111) Si substrates, has been measured by MeV 4He+ ion channeling. For CaF2 films thinner than 200 nm, the planar strain was… (More)
CaF2 films have been grown epitaxially on (100) and (111) Si substrates by molecular beam epitaxy. These films have been characterized by electron microscopy, reflection high‐energy electron… (More)