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A novel cool plasma surface activation method has been developed for high quality SOI/SDB (Silicon wafer Direct Bonding) preparation. The activation effectiveness of different plasma gases, espetially of O<inf>2</inf> plsma gases were investigated. The measurements of H. V-PMOS and L.V.-NMOS devices made on the SOI/SDB and on a bulk Silicon indicate that(More)
To prevent spinning of the upper non-rotated part of the electromechanical drill, an ‘antitorque system’ has to be included in the downhole unit. At the same time, the anti-torque must allow the drill to move up and down the borehole during drilling and tripping operations. Usually the antitorque system has a blade form of various designs that engages with(More)
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