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Thin silicon nitride (Si 3 N 4) films deposited using plasma-enhanced chemical deposition (PECVD) method have been used as metal-insulator-metal (MIM) capacitor dielectric for GaAs hetero-junction bipolar transistor (HBT) technology. The characteristics of the films, which were deposited at 300 o C, were found to be dependent on how the PECVD film was(More)
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