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A novel field emission array has been developed for use in a deep sub-micron electron-beam lithography system. The device consists of a two dimensional array of miniature amorphous diamond (a-D) cathodes deposited on aluminum biasing pads controlled by CMOS circuitry. Each cathode is individually addressable, providing a matrix of independent electron(More)
The safe charge injection density for pulsing of 316LVM electrodes has been reported to be 40 /spl mu/C/cm/sup 2/. However, only 20 /spl mu/C/cm/sup 2/ is available for nonfaradic charge transfer and double layer charge injection. Therefore, the authors evaluated long term pulsing at 20 /spl mu/C/cm/sup 2/ with capacitor coupling.
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