J. W. Slotboom

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Electrothermal consequences of implementing bulk-silicon RF power MOS processes in the silicon-on-glass sub-strate transfer technology are investigated in this paper. Fabricated silicon-on-glass vertical double-diffused MOSFETs are measured on-wafer and very large thermal resistance values are extracted for each design. The influence of the thermal(More)
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This report describes a modeling and experimental study of electron and hole impact ionization in silicon bipolar transistors. A method is developed to extract simultaneously the effective field (carrier temperature) dependent electron and hole ionization coefficients from multiplication coefficient data. A simple non local impact ionization model for(More)
The difference between the experimental and theoretical spatial response function (SRF) of a narrow tube with water is used for a localization test for magnetic resonance spectroscopic imaging (MRSI). From this difference a quantitative performance parameter is derived for the relative amount of signal within a limited region in the field of view. The total(More)
Spectrometers make use of D/A converters to generate RF and gradient shapes. This paper examines by exact simulations the time and amplitude digitization effects, inherent to the use of D/A converters, on the performance of amplitude modulated (AM) frequency selective RF pulses. By making use of Fourier theory and the small tip angle approximation, an(More)
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