J. W. Slotboom

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The electro-thermal behavior of NPNs fabricated in a backwafer contacted silicon-on-glass integrated bipolar process has been investigated experimentally and the results are supported by 2D MEDICI simulations including the lattice heating equation. The devices are fabricated in silicon islands, the smallest of which is 23/spl times/10/spl times/0.94 /spl(More)
This paper concentrates on a systematic approach to modelling the electro-thermal interaction in RF high power bipolar transistors. This research is principally motivated by an increasing demand from designers of power transistors for predictive models. The modelling of the electro-thermal interaction is very important in power transistors, since large(More)
Electrothermal consequences of implementing bulk-silicon RF power MOS processes in the silicon-on-glass sub-strate transfer technology are investigated in this paper. Fabricated silicon-on-glass vertical double-diffused MOSFETs are measured on-wafer and very large thermal resistance values are extracted for each design. The influence of the thermal(More)
In this paper we introduce a method to significantly reduce the substrate leakage current in an RF NMOS switch device without degrading the device figure-of-merit (R<inf>on</inf>&#x00D7;C<inf>off</inf>), and with no increase in device complexity. This is based on modifying the structure layout, and introducing dedicated sinks. These sinks prevent the(More)
The difference between the experimental and theoretical spatial response function (SRF) of a narrow tube with water is used for a localization test for magnetic resonance spectroscopic imaging (MRSI). From this difference a quantitative performance parameter is derived for the relative amount of signal within a limited region in the field of view. The total(More)
Spectrometers make use of D/A converters to generate RF and gradient shapes. This paper examines by exact simulations the time and amplitude digitization effects, inherent to the use of D/A converters, on the performance of amplitude modulated (AM) frequency selective RF pulses. By making use of Fourier theory and the small tip angle approximation, an(More)
This paper reports the results of multicentre studies aimed at designing, constructing, and evaluating prototype test objects for performance assessment in small-bore MRS systems, by utilizing the test protocols already proposed by the EEC COMAC-BME Concerted Action for clinical MRS equipment. Three classes of test objects were considered: (1) a(More)
This report describes a modeling and experimental study of electron and hole impact ionization in silicon bipolar transistors. A method is developed to extract simultaneously the effective field (carrier temperature) dependent electron and hole ionization coefficients from multiplication coefficient data. A simple non local impact ionization model for(More)
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