J. Vellanki

We don’t have enough information about this author to calculate their statistics. If you think this is an error let us know.
Learn More
A vertical p-i-n diode is made for the first time in InP:Fe using megaelectronvolt energy ion implantation, A 20-MeV Si implantation and kiloelectronvolt energy Be/P coimplantation are used to obtain a buried n/sup +/ layer and a shallow p/sup +/ layer, respectively. The junction area of the device is 2.3*10/sup -5/ cm/sup 2/ and the intrinsic region(More)
  • 1