J. Sinderhauf

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A SiGe HBT with 22 GHz ft was optimized for power applications. A driver stage measured on wafer achieves Psat=23 dBm at 1.8 GHz with PAE up to 68%. A family of SiGe power amplifiers was developed for assembly in standard PSSOP packages and in flipchip technology. There are single and dualband PAs for 900 MHz and 1800 MHz GSM bands. The PAs are fully(More)
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