J. Shirakashi

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We report a novel technique for the fabrication of planar-type Ni-based single-electron transistors (SETs) using electromigration method induced by field emission current. The method is so-called "activation" and is demonstrated using arrow-shaped Ni nanogap electrodes with initial gap separations of 21-68 nm. Using the activation method, we are easily able(More)
We propose a new fabrication scheme of quantum point contacts (QPCs) composed of nanogaps at room temperature. This scheme is based on electromigration induced by a field emission current, which is so-called "activation." By applying the activation to ferromagnetic Ni nanogaps with sub-10 nm separation, QPCs can be easily obtained at room temperature. The(More)
We propose a stepwise feedback-controlled electromigration (SFCE) approach to control the channel resistance of metal nanowires at room temperature. SFCE procedure finely divides a conventional feedback-controlled electromigration (FCE) scheme into several FCE cycles. This approach effectively removes thermal instability caused by large current passing(More)
10 micrometer-scale scanning probe microscopy (SPM) local oxidation lithography was performed on Si. In order to realize large-scale oxidation, an SPM tip with a contact length of 15 microm was prepared by focused-ion-beam (FIB) etching. The oxidation was carried out in contact mode operation with the contact force ranging from 0.1 to 2.1 microN. The(More)
We report a simple method for the control of electrical characteristics of planar-type metal-based single-electron transistors (SETs) using field-emission-induced electromigration. The advantages of this method are as follows: (1) the fabrication of SETs is achieved by only passing a field emission current through a nanogap and (2) the charging energy of(More)
It is well-known that the tip of an Atomic Force Microscope (AFM) can act as a cutting tool for machining various types of materials. In this article, AFM machining experiments have been conducted to investigate the machining characteristics of a nickel-iron thin film material. The influences of the machining parameters on the resulting machined geometries(More)
A newly investigated technique for the tuning of the tunnel resistance of nanogaps using electromigration method induced by a field emission current is presented to reduce the power consumption during the process. The method is called "activation" and is demonstrated with a current source. Planar-type initial nanogaps of Ni separated by 20-80 nm were(More)
A novel technique for the integration of planar-type single-electron transistors (SETs) composed of nanogaps is presented. This technique is based on the electromigration procedure, which is caused by a field emission current. The technique is called "activation." By applying the activation to the nanogaps, SETs can be easily obtained. Furthermore, the(More)
Scanning probe microscopy (SPM)-based lithography at the micro- and nano-scales is presented. Our method in SPM local oxidation involves two SPM tips, one having a robust blunt tip, a "micrometer tip," and the other having a sharp tip, a "nanometer tip." In tapping-mode SPM local oxidation experiments, Si oxide wires with sub-10 nm resolution were produced(More)
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