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In this paper, we present the design of an integrated low noise amplifier (LNA) for WLAN applications in the 6 GHz range using a SiGe BiCMOS technology. The SiGe HBTs feature a cut-off frequency f/sub t/ higher than 40 GHz and maximum oscillation frequency f/sub max/ higher than 50 GHz. The design of some of the passive devices of the circuit has been(More)
In this paper, we present the design of an integrated low noise amplifier (LNA) for WLAN applications in the 6 GHz range using a low complexity SiGe BiCMOS technology. The SiGe HBTs used In the design feature a typical cut-off frequency "Ft" of 45 GHz and a typical maximum oscillation frequency "Fmax" of 60 GHz The LNA exhibits a 17 dB power gain with a 1.4(More)
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