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Silicones are an important class of hydrophobic compounds in widespread use. To evaluate their fate in the environment, an accurate value of the air-water partition (Henry's law) constant is necessary, which, unfortunately, is lacking at present. A static head space and a newly developed dynamic vapor entry loop method were used to obtain the air-water(More)
Epitaxial circuitry offers a revolution in silicon technology, with components that can be fabricated on atomic scales. We perform the first ab initio calculation of atomically thin epitaxial nanowires in silicon, investigating the fundamental electronic properties of wires two P atoms thick, similar to those produced this year by Weber et al. For the first(More)
An Insect Activity Monitor was created to measure the behavioural responses of fleas (Siphonaptera). The apparatus allows for a range of visual, chemo- and mechanoreceptor cues to be presented. The jumping response is detected by counting amplified pulses produced as the fleas land on a stretched membrane held over a microphone. Horizontal movements are(More)
Materials that undergo reversible metal-insulator transitions are obvious candidates for new generations of devices. For such potential to be realised, the underlying microscopic mechanisms of such transitions must be fully determined. In this work we probe the correlation between the energy landscape and electronic structure of the metal-insulator(More)
The s manifold energy levels for phosphorus donors in silicon are important input parameters for the design and modeling of electronic devices on the nanoscale. In this paper we calculate these energy levels from first principles using density functional theory. The wavefunction of the donor electron's ground state is found to have a form that is similar to(More)
A hydrogen bonding pathway between polydimethylsiloxane (PDMS) and hydroxyl groups on a silica surface was studied using quantum chemistry calculations of disiloxane and hexamethyldisiloxane molecules with small silica clusters. A newly developed classical force field for PDMS was developed for atomistic molecular dynamics simulation studies of PDMS –(More)
It is demonstrated that the signatures of the Hubbard Model in the strongly interacting regime can be simulated by modifying the screening in the limit of zero wavevector in Projector-Augmented Wave GW calculations for systems without significant nesting. This modification, when applied to the Mott insulator CuO, results in the opening of the Mott gap by(More)
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