J. S. Ng

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—Calculations based on a rigorous analytical model are carried out to compare the sensitivity of optical receivers that use InP and In 0 52 Al 0 48 As avalanche photodiodes (APDs). The model includes the effects of intersymbol interference, tunneling current, avalanche noise and its correlation with the stochastic avalanche duration, dead space, and(More)
A single photon avalanche diode (SPAD) with an InGaAs absorption region, and an InAlAs avalanche region was designed and demonstrated to detect 1550 nm wavelength photons. The characterization included leakage current, dark count rate and single photon detection efficiency as functions of temperature from 210 to 294 K. The SPAD exhibited good temperature(More)
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