J. S. Ayubi-Moak

Learn More
—In this work, a full-band Cellular Monte Carlo (CMC) device simulator is self-consistently coupled to an alternate-direction implicit (ADI) finite-difference time-domain (FDTD) full-wave solver. This simulation tool is then used to study the high-frequency response of a dual-finger gate GaAs MESFET via direct S-parameter extraction from time-domain(More)
Presented here are two important devices that cannot be modeled accurately and/or tractably by a single simulation technique. Simulation flows to address each device are presented. The first is a patterned Light Emitting Diode (LED), the optical modeling of which requires a mixed-level simulation approach combining FDTD (or RCWA) and Ray Tracing. The second(More)
A performance of two n-type III-V MOSFET based on an In<sub>0.3</sub>Ga<sub>0.7</sub>As channel architecture: a surface channel design with implanted source/drain contacts and a &#x03B4;-doped, implant-free design, is compared when scaled to gate lengths of 35 nm, 25 nm and 18 nm. The transistor characteristics are simulated using ensemble heterostructure(More)
A significant portion of the time required for simulating full three-dimensional (3D) charge transport in semiconductor devices using particle-based methods is spent solving the necessary field equations. Two highly effective, iterative techniques available for solving large-sparse systems of equations are the conjugate gradient (CG) method and the(More)
  • 1