J. S. Ayubi-Moak

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—In this work, a full-band Cellular Monte Carlo (CMC) device simulator is self-consistently coupled to an alternate-direction implicit (ADI) finite-difference time-domain (FDTD) full-wave solver. This simulation tool is then used to study the high-frequency response of a dual-finger gate GaAs MESFET via direct S-parameter extraction from time-domain(More)
High electron mobility transistors (HEMTs) have become important for high frequency and low noise applications. There are devices now operating with a cutoff frequency, f(T), of several 100 GHz. Through simulation, we have been investigating how these frequencies may be pushed even higher, and have found that it may be possible to achieve an f(T) of over 3(More)
Presented here are two important devices that cannot be modeled accurately and/or tractably by a single simulation technique. Simulation flows to address each device are presented. The first is a patterned Light Emitting Diode (LED), the optical modeling of which requires a mixed-level simulation approach combining FDTD (or RCWA) and Ray Tracing. The second(More)
A performance of two n-type III-V MOSFET based on an In<sub>0.3</sub>Ga<sub>0.7</sub>As channel architecture: a surface channel design with implanted source/drain contacts and a &#x03B4;-doped, implant-free design, is compared when scaled to gate lengths of 35 nm, 25 nm and 18 nm. The transistor characteristics are simulated using ensemble heterostructure(More)
A significant portion of the time required for simulating full three-dimensional (3D) charge transport in semiconductor devices using particle-based methods is spent solving the necessary field equations. Two highly effective, iterative techniques available for solving large-sparse systems of equations are the conjugate gradient (CG) method and the(More)
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