J. Rituerto Sin

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We have deposited CeO<sub>2</sub> thin films on p-Si(100) substrates to investigate their electrical properties originated from oxygen vacancies, using pulsed laser deposition(PLD) method. (111) preferential orientation was observed. Raman spectra revealed that a film deposited at 760deg C had the smallest distortion of the unit structure due to small(More)
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