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Journals and Conferences
We report a 10-GHz colliding pulse mode-locked laser fabricated with integrated active-passive waveguides. The laser fabrication adopted a deep reactive ion etching and single-step metal-organic vapor phase epitaxy regrowth process for forming the buried heterostructure waveguide. Clean output pulses resulted from laterally tilting the active-passive… (More)
We have demonstrated the first Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) insulated gate n-channel enhancement-mode In/sub 0.53/Ga/sub 0.47/As MOSFET's on InP semi-insulating substrate. Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) was electron beam deposited from a high purity single crystal Ga/sub 5/Gd/sub 3/O/sub 12/ source. The source and drain regions of the device… (More)
S. J. B. Yoo,* J. P. Heritage, V. J. Hernandez, R. P. Scott, W. Cong, N. K. Fontaine, R. G. Broeke, J. Cao, S.-W. Seo, J.-H. Baek, F. M. Soares, Y. Du, C. Yang, W. Jiang, K. Aihara, Z. Ding, B. H. Kolner, Anh-Vu Pham, Shu Lin, F. Olsson, S. Lourdudoss, K. Y. Liou, S. N. G. Chu, R. A. Hamm, B. Patel, W. S. Hobson, J. R. Lothian, S. Vatanapradit, L. A.… (More)
We report a III-V based metal oxide semiconductor field effect transistor (MOSFET) technology using Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as the gate insulator. Enhancement-mode p- and n-channel, depletion-mode n-channel GaAs MOSFETs, and enhancement-mode n-channel In/sub 0.53/Ga/sub 0.47/As MOSFETs were demonstrated.
We report electrical and optical injection locking of an InP colliding pulse mode locked laser emitting synchronized, nearly transform-limited output pulses at 10.3 GHz, fabricated by active-passive integration and a single step regrowth process.
As an alternative to AlGaAs/GaAs heterojunction bipolar transistors (HBTs) for microwave applications, InGaP/GaAs HBTs with carbon-doped base layers grown by metal organic molecular beam epitaxy (MOMBE) with excellent DC, RF, and microwave performance are demonstrated. As previously reported, with a 700-AA-thick base layer (135- Omega /sq sheet resistance),… (More)
We present XFROG characterization of a 10 GHz colliding-pulse mode-locked laser on InP under hybrid modelocking. Pulse shape and chirp were extracted directly from the XFROG traces for power level as low as -10 dBm.
High-quality GaAs-AlGaAs heterojunction bipolar transistors (HBTs) in which the carbon-doped base layers (p=10/sup 10/-10/sup 20/ cm/sup -3/, 400-800 AA thick) and Sn-doped collector and subcollector layers are grown by metalorganic molecular-beam epitaxy (MOMBE) and a subsequent regrowth using metalorganic chemical vapor deposition (MOCVD) is used to… (More)
We have investigated InGaAs MOSFETs using a mixture of Ga/sub 2/O/sub 3/ and Gd/sub 2/O/sub 3/ as the gate dielectric evaporated from a high-purity single-crystal Gd/sub 3/Ga/sub 5/O/sub 12/ source. We report the first Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) insulated gate n-channel enhancement-mode In/sub 0.53/Ga/sub 0.47/As MOSFETs on an InP semi-insulating… (More)
We investigate the optical clock recovery operation of a colliding-pulse mode-locked laser with integrated active-passive waveguides. Nearly transformed-limited 10 GHz recovered clock signal was demonstrated with low timing jitter and error free performance