J. R. Lothian

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We report a 10-GHz colliding pulse mode-locked laser fabricated with integrated active-passive waveguides. The laser fabrication adopted a deep reactive ion etching and single-step metal-organic vapor phase epitaxy regrowth process for forming the buried heterostructure waveguide. Clean output pulses resulted from laterally tilting the active-passive(More)
We have demonstrated the first Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) insulated gate n-channel enhancement-mode In/sub 0.53/Ga/sub 0.47/As MOSFET's on InP semi-insulating substrate. Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) was electron beam deposited from a high purity single crystal Ga/sub 5/Gd/sub 3/O/sub 12/ source. The source and drain regions of the device(More)
S. J. B. Yoo,* J. P. Heritage, V. J. Hernandez, R. P. Scott, W. Cong, N. K. Fontaine, R. G. Broeke, J. Cao, S.-W. Seo, J.-H. Baek, F. M. Soares, Y. Du, C. Yang, W. Jiang, K. Aihara, Z. Ding, B. H. Kolner, Anh-Vu Pham, Shu Lin, F. Olsson, S. Lourdudoss, K. Y. Liou, S. N. G. Chu, R. A. Hamm, B. Patel, W. S. Hobson, J. R. Lothian, S. Vatanapradit, L. A.(More)
We report a III-V based metal oxide semiconductor field effect transistor (MOSFET) technology using Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as the gate insulator. Enhancement-mode p- and n-channel, depletion-mode n-channel GaAs MOSFETs, and enhancement-mode n-channel In/sub 0.53/Ga/sub 0.47/As MOSFETs were demonstrated.
As an alternative to AlGaAs/GaAs heterojunction bipolar transistors (HBTs) for microwave applications, InGaP/GaAs HBTs with carbon-doped base layers grown by metal organic molecular beam epitaxy (MOMBE) with excellent DC, RF, and microwave performance are demonstrated. As previously reported, with a 700-AA-thick base layer (135- Omega /sq sheet resistance),(More)
High-quality GaAs-AlGaAs heterojunction bipolar transistors (HBTs) in which the carbon-doped base layers (p=10/sup 10/-10/sup 20/ cm/sup -3/, 400-800 AA thick) and Sn-doped collector and subcollector layers are grown by metalorganic molecular-beam epitaxy (MOMBE) and a subsequent regrowth using metalorganic chemical vapor deposition (MOCVD) is used to(More)
We have investigated InGaAs MOSFETs using a mixture of Ga/sub 2/O/sub 3/ and Gd/sub 2/O/sub 3/ as the gate dielectric evaporated from a high-purity single-crystal Gd/sub 3/Ga/sub 5/O/sub 12/ source. We report the first Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) insulated gate n-channel enhancement-mode In/sub 0.53/Ga/sub 0.47/As MOSFETs on an InP semi-insulating(More)
We investigate the optical clock recovery operation of a colliding-pulse mode-locked laser with integrated active-passive waveguides. Nearly transformed-limited 10 GHz recovered clock signal was demonstrated with low timing jitter and error free performance