J. P. Yoon

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Switching dynamics of ferroelectric materials are governed by the response of domain walls to applied electric field. In epitaxial ferroelectric films, thermally-activated 'creep' motion plays a significant role in domain wall dynamics, and accordingly, detailed understanding of the system's switching properties requires that this creep motion be taken into(More)
The sophistication of computer technology and information transmission on internet has made various cyber information repository available to information consumers. In the era of information super-highway, the digital library which can be accessed from remote sites at any time is considered the prototype of information repository. Using object-oriented(More)
Ferroelectric (FE) thin films have been used in numerous applications, including FE random access memories (FeRAM) and FE field effect transistors. As the devices become smaller, the required FE films should become thinner. The ultimate size of such miniaturization will depend on how thin the films can be made without losing their required FE properties.(More)
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