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Titanium–silicon–nitride films were grown by metal–organic atomic-layer deposition at 180 °C. When silane was supplied separately in the sequence of a tetrakis~dimethylamido! titanium pulse, silane pulse, and ammonia pulse, the Si content in the deposited films and the deposition thickness per cycle remained almost constant at 18 at. % and 0.22 nm/cycle,(More)
An algorithm is presented for the effective and accurate integration of the temperature solution of a four-layer plate structure with infinite lateral boundaries. By using the method of images, the effect of the finite lateral boundaries of a rectangular structure can be taken into account, and the solution of the infinite plate structure can be utilized to(More)
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