J. Marczewski

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The paper presents the concept and the verification of a novel silicon monolithic active pixel detector realized in the SOI technology. The reliability and the basic electrical characteristics of the sensor are studied and the sensor sensitivity to the ionising radiation is investigated in details. 2004 Elsevier Ltd. All rights reserved.
Phenomena of the radiation coupling to the field effect transistors based terahertz detectors is studied. We show that in the case of flat metallic antennas important part of radiation, instead coupling to the transistors, is coupled to the substrate leading to losses. Experimental and theoretical investigations of the responsivity versus substrate(More)
Approaches based on thinning down the substrate under the antenna are often used in order to increase efficiency of detectors built with MOSFETs and antennae printed on thick substrates. Such detectors have relatively low responsivity. In applications where cheap individual pixels are required, standard silicon lenses used to increase the responsivity are(More)
This paper presents a measurement-based analysis of operation of an example MOSFET detector integrated with a narrow-band patch antenna. First, responsivity of the detector was measured versus frequency of incident wave revealing two responsivity peaks, and then the antenna and the transistor were on-wafer probed to extract their impedances and antenna(More)
As a result of the high luminosity phase of the SLHC, for CMS a tracking system with very high granularity is mandatory and the sensors will have to withstand an extreme radiation environment of up to 10 part/. On this basis, a new geometry with silicon short strip sensors (strixels) is proposed. To understand their performances, test geometries are(More)
Monolithic active pixel detectors in SOI (Silicon On Insulator) technology are novel sensors of ionizing radiation, which exploit SOI substrates for the integration of readout electronics and a pixel detector. Some important parameters of the devices are breakdown voltage and leakage current. The paper addresses recent developments in the field of the(More)
Silicon metal-oxide-semiconductor field-effect transistors with four different types of planar antennas were used to scan the cross section of radiation beams of 0.1 THz and 0.336 THz. Transistors were mounted on a support and bonded with Au wires. We show that the map of the power distribution in the beam cross-section depends on details of mounting of a(More)