J. M. Vasi

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In this paper, for the first time, we analyze non-quasi-static (NQS) effects during single-event upsets (SEUs) in deep-submicron (DSM) MOS devices, using extensive 2D device, BSIM4 and Look-Up Table (LUT) simulations. We know that even for DSM transistors and circuits, the quasi-static approximation is valid for most digital applications. However, a(More)
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