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We present experimental evidence of Sb incorporation inside InAs/GaAs(001) quantum dots exposed to an antimony flux immediately before capping with GaAs. The Sb composition profile inside the nanostructures as measured by cross-sectional scanning tunneling and electron transmission microscopies show two differentiated regions within the quantum dots, with(More)
Structure-spectra relationship in semiconductor quantum dots ͑QDs͒ is investigated by subjecting the same QD sample to single-dot spectroscopy and cross-sectional scanning tunneling microscopy ͑XSTM͒ structural measurements. We find that the conventional approach of using XSTM structure as input to calculate the spectra produces some notable conflicts with(More)
In this paper we show the use of an optimally parameterized empirical potential of the Abell-Tersoff type for atomistic simulations of the elastic properties of the epitaxially grown quaternary alloy InGaAsSb. We find that the strain energy as a function of composition does not follow intuitive averages between the binary constituents. Furthermore we will(More)
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