J. M. Mirabel

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We propose a new way to design new memory cells assisted with a physical model taking into account reliability. First, we study the coupling ratio impact on the electric field and its consequences on cell hardness. The choice of coupling ratio in a new cell design should result from a compromise between a high K/sub e/ value in order to use low supply(More)
The aim of this work is to present two solutions developed to optimize Flash cell erasing time. These solutions have been proposed with our flash simulator based on Pao and Sah approach. This model was implemented in a common circuit simulator, Eldo, and used to study the Flash memory writing/erasing operations. Thank to simulations, we have proposed two(More)
Control gate I Select A model for static and transient simulations of an electrically erasable programmable read only memory cell has been U FG developed. This physical compact model is based on charge Source 1 1 Drain f 1 Bit line sheet approach which is able to describe the complete electrical behavior of the cell. In this model, we have introduced the(More)
A pseudo-2D analysis of the velocity saturation region (VSR) integrated in an analytical drift-diffusion surface-potential-based model is proposed. This approach allows the determination of the spatial repartition along the saturated channel of the surface potential and the electrical field for the modeling of the channel hot electron injection (CHEI). This(More)
A concept of dual-control gate EEPROM cell and array architecture are proposed. New programming conditions used for write and erase operations are developed to improve the lifetime of the cell. This approach allows a programming of the cell only by the top of the structure without bias on the drain-bulk or source-bulk junctions. Moreover, compared to the(More)
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