J. M. Dallesasse

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Since the discovery of III-V oxidation by Dallesasse and Holonyak in 1989, significant progress has been made, both technically and commercially, on the use of oxides in compound semiconductor devices. The process-induced modification of refractive index and conductivity allows control of the two carriers of information in optoelectronic systems, the photon(More)
An integrated tunable CMOS laser for silicon photonics, operating at the C-band, and fabricated in a commercial CMOS foundry is presented. The III-V gain medium section is embedded in the silicon chip, and is hermetically sealed. The gain section is metal bonded to the silicon substrate creating low thermal resistance into the substrate and avoiding lattice(More)
Data are presented showing open-eye 20-Gb/s transmission for a quantum-well transistor laser operating at room temperature (25&#x00B0;C). The fast spontaneous recombination lifetime (~ 30 ps) in the base region results in a resonance-free frequency response allowing demonstration of 20-Gb/s transmission with an I/I<sub>TH</sub>=3. It is shown that higher(More)
A novel method to achieve single-fundamental-mode lasing and higher order mode suppression using a multi-layer, patterned, dielectric anti-phase filter is employed on the top of oxide-confined vertical-cavity surface-emitting lasers (VCSELs). Dielectric layers are deposited and patterned on individual VCSELs in a wafer-scale process to modify(More)
We present a physical model for recently demonstrated high indium content self-assembled In0.4Ga0.6N/GaN quantum dot (QD)-based ridge-waveguide lasers emitting at red wavelengths. The strain distribution in the QD is calculated using linear elastic theory with the application of shrink-fit boundary condition at the InGaN/GaN material interface, and the(More)
We present a comprehensive model for In(0.18)Ga(0.82)N/GaN self-assembled quantum dot (QD) active material. The strain distribution in the QD structure is studied using linear elastic theory with the application of the shrink-fit boundary condition at the material interface. Subsequent calculations also predict the strain-induced quantum-confined Stark(More)
The light-emitting transistor (LET) is examined as a fundamental circuit element for electronic-photonic integration. Basic device properties, methods of integration, and simple electronic-photonic circuits built upon the LET are examined. Novel materials, methods, and devices for heterogeneous integration are also presented.
A compact analysis platform for detecting liquid absorption and emission spectra using a set of optical linear variable filters atop a CMOS image sensor is presented. The working spectral range of the analysis platform can be extended without a reduction in spectral resolution by utilizing multiple linear variable filters with different wavelength ranges on(More)
This letter explores the modal behavior of oxide-confined vertical-cavity surface-emitting lasers (VCSELs) with varying emission apertures defined by impurity-induced disordering (IID) via closed ampoule zinc diffusion. A 1-D plane wave propagation method is used to calculate the mirror loss as a function of IID strength and depth. The devices are(More)