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A 144 elements array of transistor crosspoints has been realized. It achieves low insertion loss and high dynamic breakdown using a conventional bipolar technology. The chip measures 4.3 × 4.1 mm<sup>2</sup> and is mounted on a 76 pins substrate.
A 144-element array of crosspoint switches has been fabricated. With a total insertion loss of 0.04 dB on a 600 /spl Omega/ load and an off state capacitance of 0.4 pF the chip can be used in large switching systems. The crosspoint has a breakdown voltage of 40 V, a holding current of 800 /spl mu/A. A good immunity against transient pulses is achieved by a… (More)
The description of this matrix and a discussion of the technology choices are presented. Packaged on a 25 mm square ceramic module, the 4.3/spl times/4.1 mm chip uses a junction isolation crosspoint design fully electrically compatible with its predecessor single-chip crosspoint. A ver low (3/spl times/10/SUP -4/) fraction of the device current is diverted… (More)