J. L. Sacedón

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The formation of nanometer-scale islands is an important issue for bottom-up-based schemes in novel electronic, optoelectronic and magnetoelectronic devices technology. In this work, we present a detailed atomic force microscopy analysis of Si island arrays grown by molecular beam epitaxy. Recent reports have shown that self-assembled distributions of(More)
Self-organized growth of GaAs on (110) substrates vicinal to (111)A by hydrogen-assisted molecular beam epitaxy (H-MBE) has been studied for different kinetic regimes using atomic force microscopy (AFM). When GaAs growth is limited by kinetics of adatom incorporation to steps, the presence of chemisorbed H on the surface after oxide removal promotes the(More)
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