J. K. Efavi

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The reduction of the equivalent oxide thickness (EOT) of the gate oxide has emerged as one of the most difficult tasks addressing future CMOS technology. In order to overcome gate tunneling, the introduction of so-called high-κ materials will be necessary [1]. Hafnium dioxide, HfO2 [2], zirconium dioxide, ZrO2 [3], and their silicates are assumed to be the(More)
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