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Results are presented from real-time experiments that evaluated large field programmable gate arrays (FPGAs) fabricated in different CMOS technologies (0.15 /spl mu/m, 0.13 /spl mu/m, and 90 nm) for their sensitivity to radiation-induced single-event upsets (SEUs). These results are compared to circuit simulation (Qcrit) studies as well as to Los Alamos(More)
Heavy ion cross section data taken from a hardened-by-design circuit are presented which deviate from the traditional single sensitive volume or classical rectangular parallelepiped model of single event upset. TCAD and SPICE analysis demonstrate a SEU mechanism dominated by multiple node charge collection. Monte Carlo simulation is used to model the(More)
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