J. J. Bomphrey

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Copyright and reuse: The Warwick Research Archive Portal (WRAP) makes this work of researchers of the University of Warwick available open access under the following conditions. This article is made available under the Creative Commons Attribution-3.0 Unported (CC BY 3.0) license and may be reused according to the conditions of the license. For more details(More)
We report the direct deposition of indium antimonide, by molecular beam epitaxy (MBE) on gallium antimonide, resulting in the formation of quantum dots (QDs) with a maximum density of 5.3 10 cm . Using reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM) for the analysis of samples with InSb depositions of 1–6 ML equivalent(More)
The lateral ordering of arrays of self-assembled InAs-GaAs quantum dots (QDs) has been quantified as a function of growth rate, using the Hopkins-Skellam index (HSI). Coherent QD arrays have a spatial distribution which is neither random nor ordered, but intermediate. The lateral ordering improves as the growth rate is increased and can be explained by more(More)
Copyright and reuse: The Warwick Research Archive Portal (WRAP) makes this work of researchers of the University of Warwick available open access under the following conditions. This article is made available under the Creative Commons Attribution 4.0 International license (CC BY 4.0) and may be reused according to the conditions of the license. For more(More)
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