J. Hernández-Rosas

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InAs layers with thickness of 1 monolayer (d-layers) were grown by MBE embedded in GaAs barriers in the direction [1 0 0]. Photoluminescence (PL) spectroscopy was employed to study the electronic transitions in the d-layers. By secondary-ion mass spectroscopy (SIMS) we checked out the possible In segregation. The samples consist of five InAs d-layers(More)
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