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OPFET(Optical Field Effect Transistor) is an useful device for optical communication and as photo detector. In this paper, the I-V characteristics of back illuminated device are plotted using finite difference methods. This is done by solving the one dimensional continuity equation for electrons by discretizing the problem domain. Finite-difference method(More)
Optically controlled MESFET are useful device for optical communication and as photodetectors. Mobility and life time of carriers are strongly function of impurity concentration. In this paper the IV characteristerstics of an opaque gate Optically controlled MESFET is presented at the low impedance state of the device. Considering concentration dependent(More)
OPFET (Optical Field Effect Transistor) is a useful device for optical communication and as photo detector. In this paper, the I-V characteristics of the back illuminated OPFET are plotted using finite difference methods by solving the without time dependent continuity equations in which the incident radiation is allowed to enter through the substrate by(More)
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