J.G. Ekerdt

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We report a high performance NFET with a HfO/sub 2//TiN gate stack showing high field (1 MV/cm) DC mobility of 194 cm/sup 2//V-s (80% univ. SiO/sub 2/) and peak DC mobility of 239 cm/sup 2//V-s at EOT=9.5/spl Aring/. These mobility results are among the best reported for HfO/sub 2/ with sub-10 /spl Aring/ EOT and represent a potential gate dielectric(More)
Si(O0 1 ) interfaces are among the most technologically important for nonlinear optical analysis, yet their exceptionally weak interfacial second harmonic susceptibility )I12)s has strongly inhibited quantitative interface-specific second harmonic (SH) spectroscopy and related nonlinear optical process control applications. The advent of widely tunable.(More)
We have fabricated germanium-silicon (Si/HfSiO<sub>x</sub>) core-shell nanocrystal (NC) structures to work as charge storage nodes in NC flash memories. This core shell NC structure was made by doing silane annealing treatment before and after Ge NC deposition. This silicon(Si/HfSiO<sub>x</sub>) shell layer can separate the Ge NC from HfO<sub>2</sub> and(More)
This paper presents a new germanium-silicon core-shell nanoparticle structure for nonvolatile memory applications. This core-shell can help to passivate Ge dots from oxidation, create more favorable interface between nanoparticle and high K dielectric materials and improve device performance.
Reflected second harmonic spectra from a Si(OO1)-(2x 1) surface in ultrahigh vacuum change in radically different ways upon adsorption of hydrogen, germanium, or boron. Ab initio and semi-empirical tight-binding microscopic theories reproduce and explain the observed trends.
Due to their unique sensitivity to surfaces and interfaces, nonlinear optical techniques such as second harmonic (SH) and sum frequency generation (SFG) have emerged as powerful and highly versatile spectroscopic probes. With the recent availability of commercial, tunable, femtosecond laser systems, in-situ, real-time monitoring of the optical SH responses(More)
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