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A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO<inf>2</inf> interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long standing debate about the true nature of interface states.
We have developed a new technique, spin dependent charge (SDCP) pumping which combines the unrivaled analytical power of EPR to identify the atomic scale nature of point defects with charge pumping, a widely used electrical characterization technique used to study interface/near interface defects in MOSFETs. We demonstrate SDCP to be a very powerful tool… (More)