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We present experimental and simulation results from investigating critical issues challenging Double Patterning lithography capability to meet manufacturing requirements for 45 nm 1/2 pitch on 0.93 NA lithography system. Simulations of lithography alternatives for positive and negative patterning processes based on focus-exposure metrics show that dual-line(More)
The 22-nm technology node presents a real breakthrough compared to previous nodes in the way that state of the art scanner will be limited to a numerical aperture of 1.35. Thus we cannot “simply” apply a shrink factor from the previous node, and tradeoffs have to be found between Design Rules, Process integration and RET solutions in order to maintain the(More)
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