J. F. Zhang

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Article history: Available online xxxx a b s t r a c t Negative bias temperature instability (NBTI) has become an important reliability concern for nano-scaled complementary metal oxide (CMOS) devices. This paper presents the effect of NBTI for a 45 nm advanced-process high-k dielectric with metal gate PMOS transistor. The device had incorporated(More)
—SiO 2 /high-κ dielectric stack is a candidate for replacing the conventional SiO 2-based dielectric stacks for future Flash memory cells. Electron traps in the high-κ layer can limit the memory retention via the trap-assisted tunneling, and there is a pressing need for their characterization. A new two-pulse C–V measurement technique is developed in this(More)
The interface stability of hybrid silicene/fluorosilicene nanoribbons (SFNRs) has been investigated by using density functional theory calculations, where fluorosilicene is the fully fluorinated silicene. It is found that the diffusion of F atoms at the zigzag and armchair interfaces of SFNRs is endothermic, and the corresponding minimum energy barriers are(More)
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