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—SiO 2 /high-κ dielectric stack is a candidate for replacing the conventional SiO 2-based dielectric stacks for future Flash memory cells. Electron traps in the high-κ layer can limit the memory retention via the trap-assisted tunneling, and there is a pressing need for their characterization. A new two-pulse C–V measurement technique is developed in this(More)
Article history: Available online xxxx a b s t r a c t Negative bias temperature instability (NBTI) has become an important reliability concern for nano-scaled complementary metal oxide (CMOS) devices. This paper presents the effect of NBTI for a 45 nm advanced-process high-k dielectric with metal gate PMOS transistor. The device had incorporated(More)
High density of electron trapping in high-κ gate dielectrics remains a major concern for flash memory cells. In this work, by using the ultrafast I-V measurements, it is demonstrated that a significant portion of the Program/Erase windows are actually contributed by electrons trapped initially in the high-κ dielectric during program/erase and(More)
Interface state density is a key property for MOS devices in process development, material selection, and device simulation. Early attentions were focused on interface states within the bandgap of silicon. The interface states beyond bandgap (SBB) are often implicitly assumed to be negligible, but this is not experimentally verified. The existing techniques(More)
In the case of the circular restricted three-body problem (CR3BP), the existence of periodic orbits is strictly proved for the first- and third-order time-dependent approximate system in the inertial frame. Moreover, the expression of periodic orbits for the first-order nonautonomous system of CR3BP is presented analytically, which makes a difference for(More)
The conventional threshold voltage shift measured by extrapolating transfer characteristics, ΔVth(ex), underestimates the NBTI-induced degradation of drain current, ΔId. Mobility degradation, μµ, has been proposed as a potential contributor to ΔId. Evaluating μµ, however, can be problematic and controversial.(More)
New requirements for service-oriented network numerical control are discussed and analyzed. It brings forwards a framework of service-oriented network numerical control. The behavior of every service component in the framework is presented. Integration and collaboration mechanism of service-oriented network numerical control is very important to realize the(More)