J. D. Blevins

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Strategies aimed at improving the near junction heat removal of Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are presently limiting GaN device technology from realization of its true capability [1]. Approximately ten years ago, Cree demonstrated AlGaN/GaN HEMTs with power densities exceeding 40 W/mm [2]. Control of the GaN junction(More)
We report recent progress on GaN-on-diamond high-electron-mobility transistors (HEMTs) fabricated by low-temperature device transfer. The devices were first fabricated on a GaN-on-SiC epitaxial wafer and were subsequently separated from the SiC and bonded onto a high-thermal-conductivity diamond substrate. The resulting GaN-on-diamond HEMTs demonstrated(More)
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