J. D. Blevins

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We report recent progress on GaN-on-diamond high-electron-mobility transistors (HEMTs) fabricated by low-temperature device transfer. The devices were first fabricated on a GaN-on-SiC epitaxial wafer and were subsequently separated from the SiC and bonded onto a high-thermal-conductivity diamond substrate. The resulting GaN-on-diamond HEMTs demonstrated(More)
Strategies aimed at improving the near junction heat removal of Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are presently limiting GaN device technology from realization of its true capability [1]. Approximately ten years ago, Cree demonstrated AlGaN/GaN HEMTs with power densities exceeding 40 W/mm [2]. Control of the GaN junction(More)
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