Learn More
This paper presents reconfigurable RF integrated circuits (ICs) for a compact implementation of an intelligent RF front-end for multiband and multistandard applications. Reconfigurability has been addressed at each level starting from the basic elements to the RF blocks and the overall front-end architecture. An active resistor tunable from 400 to 1600 /spl(More)
An ultra-high-speed track-and-hold amplifier (THA) using a switched-emitter-follower (SEF) configuration is presented. Implemented in a commercially-available 0.18 /spl mu/m 120 GHz SiGe HBT BiCMOS technology, the THA core occupies a compact area of only 120 /spl times/ 200 /spl mu/m/sup 2/. The THA can operate at a sampling rate of 18 GS/sec with a total(More)
We present the design and implementation of an ultra-wideband (UWB) silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) low-noise amplifier (LNA) for use in UWB systems. The use of a shunt base-emitter capacitor and weak shunt resistive feedback in a cascode amplifier with inductive degeneration significantly improves the input bandwidth of the(More)
The analysis and design of an inductorless, resistive feedback low noise amplifier using advanced SiGe HBT technology, for application in UWB systems is presented. Measurements show 20 dB of gain with 1 dB variation over the 3 GHz to 10 GHz band, and a matched input and output with less than -10 dB of reflection. A minimum noise figure is 3.05 dB at 3 GHz(More)
This paper presents an X-band silicon-germanium (SiGe) low-noise amplifier (LNA) for a monolithically integrated phased array transmit/receive (T/R) radar module. Implemented in a 200 GHz SiGe BiCMOS technology, the LNA occupies 730 times 720 mum<sup>2</sup> (including bondpads), and dissipates 15 mW from a 2.5 V power supply. The circuit exhibits a gain(More)
This paper presents a low-power X-band low-noise amplifier (LNA) implemented in silicon-germanium (SiGe) technology targeting high-altitude or space-based low-power density phased-array radar systems. To our knowledge, this X-band LNA is the first in a Si-based technology to achieve less than 2 dB mean noise figure while dissipating only 2 mW from a 1.5 V(More)
This paper compares the performance of shunt and series/shunt single-pole double-throw nMOS switches designed in a 0.13 mum SiGe BiCMOS process for X-band phased array transmit/receive modules. From 8.5 to 10.5 GHz, the worst case return loss, insertion loss, and isolation are 14.5, 1.89, and 20.5 dB, respectively, for the reflective shunt switch, and 22.2,(More)
A comprehensive analysis of error sources in monolithic microwave phase shifters due to device size limitations, inductor parasitics, loading effects, and nonideal switches is presented. Each component utilized in the implementation of a monolithic high-pass/low-pass phase shifter is analyzed, and its influence on phase behavior is shown in detail, with an(More)
This work presents a new design methodology for inductively-degenerated cascode low-noise amplifiers using advanced epitaxial-base SiGe HBTs. Noise figure, gain, and IIP3 are calculated using calibrated linear circuit analysis and a Volterra series methodology as a function of the two major design variables: emitter geometry and biasing current. An optimum(More)
High-speed wireless technology has been evolving with roughly 2/spl times/ speed improvements every 18 months. Currently the wireless local-area network (WLAN) and wireless personal-area network (WPAN) spaces are developing new standards to increase wireless speeds beyond the 10-54 Mbit/s achieved in the first and second generation IEEE wireless network(More)