J. Chung

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Defect depth profiles of Cu (In1-x,Gax)(Se1-ySy)2 (CIGSS) were measured as functions of pulse width and voltage via deep-level transient spectroscopy (DLTS). Four defects were observed, i.e., electron traps of ~0.2 eV at 140 K (E1 trap) and 0.47 eV at 300 K (E2 trap) and hole traps of ~0.1 eV at 100 K (H1 trap) and ~0.4 eV at 250 K (H2 trap). The open(More)
—This paper proposes a low-power dynamically adaptive distance measurement technique for ultrasonic (US) pen digitizers. The technique utilizes a new clock frequency-throttling technique for a recon-figurable analog front-end in implementing a frequency-hopping scheme to minimize power dissipation. As a result, a noise-tolerant distance measurement which is(More)
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