J. C. Woicik

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Thermal stability of the high-k/In<inf>0.53</inf>Ga<inf>0.47</inf>As interface has been analyzed by both physical and electrical methods for the first time. It has been found that As-O and In-O bonds decompose and Ga-O bonds form above 400&#x00B0;C, as shown by XPS and corroborated by TEM, SIMS and EDX. Electrically, this interface decomposition resulted in(More)
Phase identification and the degree of crystallization in ultra-thin HfO<sub>2</sub> has been extremely challenging due to the &gt; 5 nm range order sensitivity of X-ray diffraction which is not sufficient to detect nanocrystallization. Yet detailed knowledge of the nanostructure is critical to the development of accurate performance models. Therefore,(More)
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