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This paper reports the BTI reliability of dual metal gate CMOSFETs with Hf-based dielectrics including HfO<sub>2</sub> and HfSiON. Severer PBTI degradation was observed on HfO<sub>2</sub> NMOSFETs and two NBTI degradation behaviors were observed on HfO<sub>2</sub> pMOSFET. The strain effect and channel length dependence on BTI were also investigated.(More)
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