J. C. H. Phang

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Recent developments have seen the use of scanning focused near infra-red (NIR) laser beams for fault localization and defect characterization in microelectronic failure analysis. Fault localization techniques are based on thermal stimulation and include power alteration techniques such as OBIRCH, TIVA, SEI, and tester based techniques such as RIL-SDL.(More)
Near infrared photon emission microscopy is an established fault localization technique for microelectronic failure analysis. Near infrared photon spectroscopy has the potential to become a useful defect characterization technique. In this paper, near infrared photon emission microscopy and spectroscopy are reviewed together with the instrumentation(More)
Although photon emission microscope (PEM) systems are widely used in integrated circuit failure analysis, there is no known quantitative baseline to assess and compare the overall sensitivity performance of PEM systems. This paper describes a method to quantify the overall sensitivity of PEM systems based on spectral detectivity measurements. It has been(More)
Scanning optical microscopy techniques are effective for optical fault localization of failures that are sensitive to thermal stimulation. In this paper, the recent developments in resolution and sensitivity enhancements that allow these techniques to be used with advanced technology nodes are described. The enhancement methods include refractive solid(More)
The effect of refractive solid immersion lens (RSIL) parameters on the enhancement to laser induced fault localization techniques are investigated. The experimental results of the effect on a common laser induced technique, namely thermally induced voltage alteration (TIVA), and imaging are presented. A signal enhancement in the peak TIVA signal of close to(More)
In this paper, the application of scanning near-field photon emission microscopy for imaging photon emission sites is demonstrated. Photon emissions generated by a Fin-FET test structure with one metallization layer are imaged with spatial resolution of 50 nm using scattering dialectic probe. The potential applications and limitations of the technique are(More)
Near-infrared photon emission spectra were obtained from the frontside of silicon nMOSFETs and pMOSFETs with a gate length of 0.13 mum and biased into saturation. These spectra were obtained using a high sensitivity in-lens spectroscopic photon emission microscope. Frontside NIR photon emission spectroscopy are performed on 0.13 mum saturated nMOSFETs and(More)