Learn More
SUMMARY Heterostructure field-effect transistors (HFETs) composed of antimonide-based compound semiconductor (ABCS) materials have intrinsic performance advantages due to the attractive electron and hole transport properties, narrow bandgaps, low ohmic contact resistances, and unique band-lineup design flexibility within this material system. These(More)
—The first W-Band antimonide based compound semiconductor low-noise amplifier has been demonstrated. The compact 1.4-mm 2 three-stage co-planar waveguide amplifier with 0.1-m InAs/AlSb high electron mobility transistor devices is fabricated on a 100-m GaAs substrate. Minimum noise-figure of 5.4 dB with an associated gain of 11.1 dB is demonstrated at a(More)
— We study the effect of process-induced uniaxial stress on the performance of biaxially strained InGaSb p-channel quantum-well field-effect transistors (QW-FETs). Uniaxial stress is incorporated using a self-aligned nitride stressor. Compared with unstressed control devices, fabricated stressed devices with a gate length of L g = 0.30 µm showed an increase(More)
The paper presents details of our physics-based three-dimensional (3D) device modeling coupled in mixed-mode with external load circuit and parasitics, which enabled accurate simulation of single-event effects (SEEs) in III–V compound high electron mobility transistors (HEMTs). We show the importance of correct device physics models, such as Schottky(More)
The impact of ͗110͘ uniaxial strain on the characteristics of p-channel In 0.41 Ga 0.59 Sb quantum-well field-effect transistors ͑QW-FETs͒ is studied through chip-bending experiments. Uniaxial strain is found to affect the linear-regime drain current and the threshold voltage of the FET through the modulation of the hole mobility of the two-dimensional hole(More)
In this report, we study the effectiveness of hydrogen plasma surface treatments for improving the electrical properties of GaSb/Al 2 O 3 interfaces. Prior to atomic layer deposition of an Al 2 O 3 dielectric, p-GaSb surfaces were exposed to hydrogen plasmas in situ, with varying plasma powers, exposure times, and substrate temperatures. Good electrical(More)
—Antimonide (Sb) quantum-well MOSFETs are demonstrated with an integrated high-κ dielectric (1-nm Al 2 O 3 /10-nm HfO 2). The effect of interface trap density D it on the dc drive current and transconductance g m is studied in detail using split C–V /G–V , pulsed I–V , and radio-frequency measurements. Pulsed I–V measurements show improved ON current,(More)
— We demonstrate ultralow ohmic contact resistance to antimonide-based, p-channel quantum-well field-effect transistor (QW-FET) structures using a new p +-InAs/InAsSb cap structure. The incorporation of a p +-InAsSb layer enables the use of a thicker cap with lower sheet resistance, resulting in an improved contact resistivity. Using a Pd-based ohmic(More)
  • 1