J. Brad Boos

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OBJECTIVES We study a cohort of Medicare-insured men and women aged 65+ in the year 2000, who lived in 11 states covered by Surveillance, Epidemiology, and End Results (SEER) cancer registries, to better understand various predictors of endoscopic colorectal cancer (CRC) screening. METHODS We use multilevel probit regression on two cross-sectional periods(More)
SUMMARY Heterostructure field-effect transistors (HFETs) composed of antimonide-based compound semiconductor (ABCS) materials have intrinsic performance advantages due to the attractive electron and hole transport properties, narrow bandgaps, low ohmic contact resistances, and unique band-lineup design flexibility within this material system. These(More)
High electron mobility transistors with InAs channels and sub 0.1-Pm metal gates, have demonstrated a 100% improvement in low-power, high-speed figure of merits over conventional InAlAs/InGaAs lattice-matched HEMTs and MHEMTs. AlSb/InAs MHEMTs exhibit transconductances as high as 1.3 S/mm at drain biases as low as 0.3 V, while maintaining f T and f max(More)
— We study the effect of process-induced uniaxial stress on the performance of biaxially strained InGaSb p-channel quantum-well field-effect transistors (QW-FETs). Uniaxial stress is incorporated using a self-aligned nitride stressor. Compared with unstressed control devices, fabricated stressed devices with a gate length of L g = 0.30 µm showed an increase(More)
The impact of ͗110͘ uniaxial strain on the characteristics of p-channel In 0.41 Ga 0.59 Sb quantum-well field-effect transistors ͑QW-FETs͒ is studied through chip-bending experiments. Uniaxial strain is found to affect the linear-regime drain current and the threshold voltage of the FET through the modulation of the hole mobility of the two-dimensional hole(More)
To date, numerous methods exist to describe the geographic distribution of potential hazards and to determine the likelihood of their occurrence in a specific location (El Morjani, Ebener, Boos, Abdel Ghaffar, & Musani, 2007). Similarly, there are well documented methods available to geographically describe and quantify physical and economic vulnerability(More)
— We demonstrate ultralow ohmic contact resistance to antimonide-based, p-channel quantum-well field-effect transistor (QW-FET) structures using a new p +-InAs/InAsSb cap structure. The incorporation of a p +-InAsSb layer enables the use of a thicker cap with lower sheet resistance, resulting in an improved contact resistivity. Using a Pd-based ohmic(More)
—Antimonide (Sb) quantum-well MOSFETs are demonstrated with an integrated high-κ dielectric (1-nm Al 2 O 3 /10-nm HfO 2). The effect of interface trap density D it on the dc drive current and transconductance g m is studied in detail using split C–V /G–V , pulsed I–V , and radio-frequency measurements. Pulsed I–V measurements show improved ON current,(More)
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