J. Brad Boos

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Several research groups have been actively pursuing antimonide-based electronic devices in recent years. The advantage of narrowbandgap Sb-based devices over conventional GaAsor InP-based devices is the attainment of high-frequency operation with much lower power consumption. This paper will review the progress on three antimonide-based electronic devices:(More)
InxGa1-xSb channel materials have the highest hole and electron mobility among all III-V semiconductors, high conduction and valence band offsets (CBO/VBO) with lattice matched AlxIn1-xSb for heterostructure MOSFET design [1] and allow low thermal budget MOSFET fabrication (Figure 1). While buried channel HEMT-like devices with excellent electron and hole(More)
The first W-Band antimonide based compound semiconductor low-noise amplifier has been demonstrated. The compact 1.4-mm three-stage co-planar waveguide amplifier with 0.1m InAs/AlSb high electron mobility transistor devices is fabricated on a 100m GaAs substrate. Minimum noise-figure of 5.4 dB with an associated gain of 11.1 dB is demonstrated at a total(More)
InxGa1-xSb is an attractive candidate for high performance III-V p-metal-oxide-semiconductor field effect transistors (pMOSFETs) due to its high bulk hole mobility that can be further enhanced with the use of strain. We fabricate and study InxGa1 xSb-channel pMOSFETs with atomic layer deposition Al2O3 dielectric and self-aligned source/drain formed by ion(More)
Heterostructure field-effect transistors (HFETs) composed of antimonide-based compound semiconductor (ABCS) materials have intrinsic performance advantages due to the attractive electron and hole transport properties, narrow bandgaps, low ohmic contact resistances, and unique band-lineup design flexibility within this material system. These advantages can(More)
InAs-based heterostructure barrier varactor (HBV) diodes with In0.3Al0.7As0.4Sb0.6 as the barrier material are demonstrated. Current–voltage and capacitance–voltage characteristics, as well as S-parameters, of HBV diodes with varying barrier thicknesses are examined. Maximum capacitance values and maximum-to-minimum capacitance ratios greater than those(More)
Heterostructures consisting of an InGaSb quantum well situated between AlGaSb barriers were grown by molecular beam epitaxy. Calculations indicate a type-I band structure with substantial valence and conduction band offsets that can allow for the confinement of either electrons or holes in the InGaSb. Quantum wells with n-type conduction were achieved using(More)
We study the effect of process-induced uniaxial stress on the performance of biaxially strained InGaSb p-channel quantum-well field-effect transistors (QW-FETs). Uniaxial stress is incorporated using a self-aligned nitride stressor. Compared with unstressed control devices, fabricated stressed devices with a gate length of Lg = 0.30 μm showed an increase of(More)
In this report, we study the effectiveness of hydrogen plasma surface treatments for improving the electrical properties of GaSb/Al2O3 interfaces. Prior to atomic layer deposition of an Al2O3 dielectric, p-GaSb surfaces were exposed to hydrogen plasmas in situ, with varying plasma powers, exposure times, and substrate temperatures. Good electrical(More)
Transistors based on III-V semiconductor materials have been used for a variety of analog and high frequency applications driven by the high electron mobilities in III-V materials. On the other hand, the hole mobility in III-V materials has always lagged compared to group-IV semiconductors such as germanium. In this paper, we explore the use of strain and(More)