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InxGa1-xSb is an attractive candidate for high performance III-V p-metal-oxide-semiconductor field effect transistors (pMOSFETs) due to its high bulk hole mobility that can be further enhanced with the use of strain. We fabricate and study InxGa1 xSb-channel pMOSFETs with atomic layer deposition Al2O3 dielectric and self-aligned source/drain formed by ion(More)
InxGa1-xSb channel materials have the highest hole and electron mobility among all III-V semiconductors, high conduction and valence band offsets (CBO/VBO) with lattice matched AlxIn1-xSb for heterostructure MOSFET design [1] and allow low thermal budget MOSFET fabrication (Figure 1). While buried channel HEMT-like devices with excellent electron and hole(More)
SUMMARY Heterostructure field-effect transistors (HFETs) composed of antimonide-based compound semiconductor (ABCS) materials have intrinsic performance advantages due to the attractive electron and hole transport properties, narrow bandgaps, low ohmic contact resistances, and unique band-lineup design flexibility within this material system. These(More)
—The first W-Band antimonide based compound semiconductor low-noise amplifier has been demonstrated. The compact 1.4-mm 2 three-stage co-planar waveguide amplifier with 0.1-m InAs/AlSb high electron mobility transistor devices is fabricated on a 100-m GaAs substrate. Minimum noise-figure of 5.4 dB with an associated gain of 11.1 dB is demonstrated at a(More)
The paper presents details of our physics-based three-dimensional (3D) device modeling coupled in mixed-mode with external load circuit and parasitics, which enabled accurate simulation of single-event effects (SEEs) in III–V compound high electron mobility transistors (HEMTs). We show the importance of correct device physics models, such as Schottky(More)
In this report, we study the effectiveness of hydrogen plasma surface treatments for improving the electrical properties of GaSb/Al 2 O 3 interfaces. Prior to atomic layer deposition of an Al 2 O 3 dielectric, p-GaSb surfaces were exposed to hydrogen plasmas in situ, with varying plasma powers, exposure times, and substrate temperatures. Good electrical(More)
— We study the effect of process-induced uniaxial stress on the performance of biaxially strained InGaSb p-channel quantum-well field-effect transistors (QW-FETs). Uniaxial stress is incorporated using a self-aligned nitride stressor. Compared with unstressed control devices, fabricated stressed devices with a gate length of L g = 0.30 µm showed an increase(More)
Heterostructures consisting of an InGaSb quantum well situated between AlGaSb barriers were grown by molecular beam epitaxy. Calculations indicate a type-I band structure with substantial valence and conduction band offsets that can allow for the confinement of either electrons or holes in the InGaSb. Quantum wells with n-type conduction were achieved using(More)