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InxGa1-xSb is an attractive candidate for high performance III-V p-metal-oxide-semiconductor field effect transistors (pMOSFETs) due to its high bulk hole mobility that can be further enhanced with the use of strain. We fabricate and study InxGa1 xSb-channel pMOSFETs with atomic layer deposition Al2O3 dielectric and self-aligned source/drain formed by ion(More)
InxGa1-xSb channel materials have the highest hole and electron mobility among all III-V semiconductors, high conduction and valence band offsets (CBO/VBO) with lattice matched AlxIn1-xSb for heterostructure MOSFET design [1] and allow low thermal budget MOSFET fabrication (Figure 1). While buried channel HEMT-like devices with excellent electron and hole(More)
—The first W-Band antimonide based compound semiconductor low-noise amplifier has been demonstrated. The compact 1.4-mm 2 three-stage co-planar waveguide amplifier with 0.1-m InAs/AlSb high electron mobility transistor devices is fabricated on a 100-m GaAs substrate. Minimum noise-figure of 5.4 dB with an associated gain of 11.1 dB is demonstrated at a(More)
SUMMARY Heterostructure field-effect transistors (HFETs) composed of antimonide-based compound semiconductor (ABCS) materials have intrinsic performance advantages due to the attractive electron and hole transport properties, narrow bandgaps, low ohmic contact resistances, and unique band-lineup design flexibility within this material system. These(More)
The impact of ͗110͘ uniaxial strain on the characteristics of p-channel In 0.41 Ga 0.59 Sb quantum-well field-effect transistors ͑QW-FETs͒ is studied through chip-bending experiments. Uniaxial strain is found to affect the linear-regime drain current and the threshold voltage of the FET through the modulation of the hole mobility of the two-dimensional hole(More)
In this report, we study the effectiveness of hydrogen plasma surface treatments for improving the electrical properties of GaSb/Al 2 O 3 interfaces. Prior to atomic layer deposition of an Al 2 O 3 dielectric, p-GaSb surfaces were exposed to hydrogen plasmas in situ, with varying plasma powers, exposure times, and substrate temperatures. Good electrical(More)
— We study the effect of process-induced uniaxial stress on the performance of biaxially strained InGaSb p-channel quantum-well field-effect transistors (QW-FETs). Uniaxial stress is incorporated using a self-aligned nitride stressor. Compared with unstressed control devices, fabricated stressed devices with a gate length of L g = 0.30 µm showed an increase(More)
The paper presents details of our physics-based three-dimensional (3D) device modeling coupled in mixed-mode with external load circuit and parasitics, which enabled accurate simulation of single-event effects (SEEs) in III–V compound high electron mobility transistors (HEMTs). We show the importance of correct device physics models, such as Schottky(More)