J. Brad Boos

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SUMMARY Heterostructure field-effect transistors (HFETs) composed of antimonide-based compound semiconductor (ABCS) materials have intrinsic performance advantages due to the attractive electron and hole transport properties, narrow bandgaps, low ohmic contact resistances, and unique band-lineup design flexibility within this material system. These(More)
— We study the effect of process-induced uniaxial stress on the performance of biaxially strained InGaSb p-channel quantum-well field-effect transistors (QW-FETs). Uniaxial stress is incorporated using a self-aligned nitride stressor. Compared with unstressed control devices, fabricated stressed devices with a gate length of L g = 0.30 µm showed an increase(More)
The impact of ͗110͘ uniaxial strain on the characteristics of p-channel In 0.41 Ga 0.59 Sb quantum-well field-effect transistors ͑QW-FETs͒ is studied through chip-bending experiments. Uniaxial strain is found to affect the linear-regime drain current and the threshold voltage of the FET through the modulation of the hole mobility of the two-dimensional hole(More)
The paper presents details of our physics-based three-dimensional (3D) device modeling coupled in mixed-mode with external load circuit and parasitics, which enabled accurate simulation of single-event effects (SEEs) in III–V compound high electron mobility transistors (HEMTs). We show the importance of correct device physics models, such as Schottky(More)
— We demonstrate ultralow ohmic contact resistance to antimonide-based, p-channel quantum-well field-effect transistor (QW-FET) structures using a new p +-InAs/InAsSb cap structure. The incorporation of a p +-InAsSb layer enables the use of a thicker cap with lower sheet resistance, resulting in an improved contact resistivity. Using a Pd-based ohmic(More)
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