J.B. Rankin

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The device parameter dependences of GaAs FET switch performance have been determined analytically and by two-dimension simulation. FET switch design would maximize the value of the switch quality factor while retaining the power handling capacity. Expressions for both the quality factor and power handling capacity are derived in terms of device parameters,(More)
The cutoff frequency f<inf>t</inf>and maximum frequency of oscillation f<inf>max</inf>of the permeable-base transistor have been calculated for devices with a fixed geometry and different doping profiles to determine the profile that gave the highest value of<tex>f_{\max}</tex>The effect of different static velocity-field curves for GaAs and InP, and(More)
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